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We developed a cluster ion beam system that produces negative cluster beams of C 1-C 10 with ion current of 4.5 nA-50 A ......
The geometric configurations and electronic structures of AlSn ±(n = 1~10) clusters were studied by the B3LYP(DFT) meth......
Wu Yuxin, female, 4 years old.On November 18th, 2013, the patient came to our hospital to visit the doctor of acupunctur......
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Full-scale dynamic testing of response-controlled buildings and their components:concepts,methods,an
A series of shake-table tests was conducted by inserting and replacing 4 different types of dampers,or by removing them ......
The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111
High-quality and nearly crack-free GaN epitaxial layer was obtained by inserting a single AlGaN interlayer between GaN e......
The leakage current mechanisms in the Schottky diode with a thin Al layer insertion between Al_(0.24
This paper investigates the behaviour of the reverse-bias leakage current of the Schottky diode with a thin Al inserting......
Six high-index cores are embedded around the central solid core of the photonic crystal fiber to form afiber embedded p......
Larvae of Apriona germari(Hope),found widely in China,cause serious damage to trees and are difficult to control.Since s......
Organic light-emitting diodes(OLEDs) composed of a novel fluorene derivative of 2,3-bis(9,9-dihexyl-9H-fluoren2-yl)-6,7-......
A current bleeding CMOS mixer with complementary transconductance stage is presented in this paper.The conversion gain o......
Influence of charge carrier injection at emitter electrode/emitter interface on the performance of m
Pentacene-based metal-base organic transistors(MBOTs) are fabricated.The influence of the charge carrier injection effic......
Type Ⅱ superlattices(SLs) short period InAs(4ML)/GaSb(8ML) were grown by molecular-beam epitaxy on lattice-mismatched G......
A series of n-ZnO/n-SiC/p-Si and n-ZnO/p-Si heterojunctions were prepared by DC sputtering.Their structural properties,......
The switchable dual-wavelength erbium-doped fiber laser(EDFL) with a two-mode photonic crystal fiber(PCF) loop mirror an......
以双极性小分子4,9-二(4-(2,2-二苯乙烯基)苯基)萘并[2,3-c][1,2,5]噻二唑(BDPNTD)为发光层,制备得到了单层非掺杂红色荧光有机发......
Performance improvement in pentacene organic thin film transistors by inserting a C_(60) ultrathin l
The contact effect on the performances of organic thin film transistors is studied here.A C 60 ultrathin layer is insert......
We investigated the effects of pulsed current (PC) and direct current (DC) driving modes on the stability of organic lig......
In-situ control of oxygen fugacity in water-free high-pressure system——Using C-O system as an exampl
By inserting an oxygen specific electrolyte disc between the sample and an oxygen buffer and exerting a DC (direct curr......
A top-contact organic field-effect transistor(OFET) is fabricated by adopting a pentacene/1,1’-bis(di-4tolylaminophenyl......
Improved ESD characteristic of GaN-based blue light-emitting diodes with a low temperature n-type Ga
We demonstrate the improvement of the electrostatic discharge(ESD) characteristic of GaN-based blue light-emitting diode......
Enhanced performance of C_(60) N-type organic field-effect transistors using a pentacene passivation
We investigated the properties of C_(60)-based organic field-enect transistors(OFETs)(?) a pentacene passivation layer i......
Phosphorescent white organic light-emitting devices with color stability and low efficiency decay by
High-performance phosphorescent white organic light-emitting devices (PhWOLEDs) with color stability and low efficiency ......
Effects of a prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum w
The electroluminescence (EL) and photoluminescence (PL) spectra of InGaN/GaN multiple quantum wells (MQWs) with a prestr......
A 10-nm-thick molybdenum tri-oxide(MoO3) thin film was used as the interconnector layer in tandem organic lightemitting ......
Ultra-broadband optical spectrum generation from a stretched pulse fiber laser utilizing zero-disper
We investigate the effects of a piece of zero-dispersion fiber(ZDF) on the pulse dynamics of a passively mode-locked fib......
A novel dual-loop optoelectronic oscillator(OEO),which is constructed based on all optical signal processing,is proposed......
Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulatio
P-InGaN/p-GaN superlattices (SLs) are developed for a hole accumulation layer (HAL) of a blue light emitting diode (LED)......
Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer ins
The advantages of a blue InGaN-based light-emitting diode with a p-InGaN layer inserted in the GaN barriers is studied. ......
An equivalent circuit (EC) method for absorbers design is proposed in this paper. Without using full-wave analysis, the ......
Redundant via(RV) insertion is a useful mechanism to enhance via reliability. However, when extra vias are inserted into......
Performance enhancement of pentacene-based organic field-effect transistor by inserting a WO_3 buffe
The pentacene-based organic field effect transistor(OFET) with a thin transition metal oxide(WO3/layer between pentacene......
Significantly improved electrostatic discharge(ESD)properties of InGaN/GaN-based UV light-emitting diode(LED)with insert......
Efficiency of a blue organic light-emitting diode enhanced by inserting charge control layers into t
We demonstrate high current efficiency of a blue fluorescent organic light-emitting diode (OLED) by using the charge con......
A new epitaxial structure of AlGaInP-based light-emitting diode(LED) with a 0.5-μm GaP window layer was fabricated. In ......
Experimental study of GaN based blue light emitting diodes with a thin AlInN layer in front of the e
The Ga N based blue light emitting diodes(LEDs) with a thin Al In N layer inserted in front of the electron blocking lay......
A composite transparent YAG/Yb:YAG/YAG ceramic was prepared by a non-aqueous tape-casting method. An optical transmittan......
Improvement of electron injection of organic light-emitting devices by inserting a thin aluminum lay
We investigate the electron injection effect of inserting a thin aluminum(Al) layer into cesium carbonate(Cs2CO3)injecti......
An organic light-emitting diode(OLED) device with high efficiency and brightness is fabricated by inserting CuO_x/Cu dua......
GaN-based blue light emitting diodes(LEDs) have undergone great development in recent years,but the improvement of green......
Effectiveness of inserting an In Ga N interlayer to improve the performances of In Ga N-based blue-v
Electron leakage still needs to be solved for In Ga N-based blue-violet laser diodes(LDs), despite the presence of the e......
With the financial support by the National Natural Science Foundation of China,Professor Johan Liu’s team at Shanghai U......
Growth condition optimization and mobility enhancement through inserting AlAs monolayer in the InP-b
The structure of In P-based In_xGa_(1-x) As/In0.52Al0.48 As pseudomorphic high electron mobility transistor(PHEMT)was op......
Recently,great efforts have been made in the fabrication of arbitrary warped devices to satisfy the requirement of weara......
Light-Emitting Diodes Based on All-Quantum-Dot Multilayer Films and the Influence of Various Hole-Tr
We present a systematic analysis of the exciton-recombination zone within all-quantum-dot(QD) multilayer films using sen......
Intra-cavity round-trip loss measurement of all-solid-state single-frequency laser by introducing ex
A scheme for measuring the intra-cavity round-trip loss of an all-solid-state single-frequency laser by inserting a type......
Tunable single-longitudinal-mode SOA-based fiber laser based on the spectral narrowing effect in a d
A tunable single-longitudinal-mode(SLM) semiconductor optical amplifier(SOA)-based fiber laser based on a dispersion-shi......
In this paper the laser activities of a diode-pumped Yb:LuAG ceramic which was prepared by the solid-state reactive sint......
It is studied in this paper that the electrical characteristics of the interface between Si O_y N_x/Si N_x stack and sil......
